GaN HEMTs
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Fujitsu Laboratories has developed a new high-reliability technology for high power gallium nitride (GaN), named high electron-mobility transistors (HEMT). The new...
made popular Sep 9 2008
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Fujitsu Laboratories has developed a new high-reliability technology for high power gallium nitride (GaN), named high electron-mobility transistors (HEMT). The new...
made popular Sep 9 2008
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